FS50R07N2E4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 650V 70A 190W
$50.15
Available to order
Reference Price (USD)
1+
$50.15000
500+
$49.6485
1000+
$49.147
1500+
$48.6455
2000+
$48.144
2500+
$47.6425
Exquisite packaging
Discount
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The FS50R07N2E4B11BOSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 190 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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