FS50R12W1T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$57.58
Available to order
Reference Price (USD)
1+
$57.58000
500+
$57.0042
1000+
$56.4284
1500+
$55.8526
2000+
$55.2768
2500+
$54.701
Exquisite packaging
Discount
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The FS50R12W1T7B11BOMA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 7.9 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: -
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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