FZ1800R12HE4B9HOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 2735A
$1,390.10
Available to order
Reference Price (USD)
1+
$853.85000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FZ1800R12HE4B9HOSA2 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 2735 A
- Power - Max: 11000 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 1800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP35R12W2T4PBPSA1
STMicroelectronics
A2F12M12W2-F1
Infineon Technologies
FZ600R17KE3HOSA1
Infineon Technologies
FS100R17N3E4BOSA1
Infineon Technologies
FP25R12KT4BPSA1
Microchip Technology
APT40GL120JU2
Infineon Technologies
FS950R08A6P2BBPSA1
Infineon Technologies
FP75R12KT4B11BOSA1
onsemi
NXH50C120L2C2ESG
Infineon Technologies