FS50R12W2T4BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 83A 335W
$64.42
Available to order
Reference Price (USD)
15+
$48.02533
Exquisite packaging
Discount
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Infineon Technologies's FS50R12W2T4BOMA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 83 A
- Power - Max: 335 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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