FS650R08A4P2BPSA1
Infineon Technologies
Infineon Technologies
HYBRID PACK 1
$623.38
Available to order
Reference Price (USD)
1+
$623.38000
500+
$617.1462
1000+
$610.9124
1500+
$604.6786
2000+
$598.4448
2500+
$592.211
Exquisite packaging
Discount
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The FS650R08A4P2BPSA1 from Infineon Technologies sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Infineon Technologies for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 750 V
- Current - Collector (Ic) (Max): 375 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBDC6I-1
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