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G33N03D3

Goford Semiconductor
G33N03D3 Preview
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
$0.85
Available to order
Reference Price (USD)
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$0.8415
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$0.833
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$0.8245
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$0.816
2500+
$0.8075
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
  • Power - Max: 18.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (3x3)

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