G3R20MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 128A TO247-4
$38.25
Available to order
Reference Price (USD)
1+
$38.25000
500+
$37.8675
1000+
$37.485
1500+
$37.1025
2000+
$36.72
2500+
$36.3375
Exquisite packaging
Discount
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G3R20MT12K by GeneSiC Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, G3R20MT12K ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 542W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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