G3R30MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 96A TO263-7
$24.20
Available to order
Reference Price (USD)
1+
$24.20000
500+
$23.958
1000+
$23.716
1500+
$23.474
2000+
$23.232
2500+
$22.99
Exquisite packaging
Discount
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Enhance your circuit performance with G3R30MT12J, a premium Transistors - FETs, MOSFETs - Single from GeneSiC Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust G3R30MT12J for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 459W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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