NVR5124PLT1G
onsemi
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
$0.49
Available to order
Reference Price (USD)
3,000+
$0.15716
6,000+
$0.14809
15,000+
$0.13901
30,000+
$0.12812
75,000+
$0.12359
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NVR5124PLT1G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVR5124PLT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Renesas Electronics America Inc
UPA2717AGR-E1-AT
Infineon Technologies
IPT059N15N3ATMA1
Sanken
GKI03026
Vishay Siliconix
SIS454DN-T1-GE3
STMicroelectronics
STL13N65M2
Infineon Technologies
IPP60R099CPXKSA1
Vishay Siliconix
SQJ433EP-T1_BE3
Vishay Siliconix
SQS462EN-T1_GE3
STMicroelectronics
STF57N65M5
Toshiba Semiconductor and Storage