G3R75MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 41A TO247-4
$11.42
Available to order
Reference Price (USD)
1+
$11.42000
500+
$11.3058
1000+
$11.1916
1500+
$11.0774
2000+
$10.9632
2500+
$10.849
Exquisite packaging
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GeneSiC Semiconductor presents G3R75MT12K, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, G3R75MT12K delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 207W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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