Shopping cart

Subtotal: $0.00

G3S06520P

Global Power Technology-GPT
G3S06520P Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 20A 2-PI
$12.75
Available to order
Reference Price (USD)
1+
$12.75000
500+
$12.6225
1000+
$12.495
1500+
$12.3675
2000+
$12.24
2500+
$12.1125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Panjit International Inc.

UF2J_R1_00001

Vishay General Semiconductor - Diodes Division

BYG23M-M3/TR

Diodes Incorporated

SBR20M150D1Q-13

Vishay General Semiconductor - Diodes Division

VS-40HFLR80S05

Taiwan Semiconductor Corporation

SS13LHRVG

Diotec Semiconductor

ES2JSMA

Microchip Technology

JANS1N5285-1/TR

Microchip Technology

UES1304E3/TR

Vishay General Semiconductor - Diodes Division

LL103A-GS18

Taiwan Semiconductor Corporation

TSSE3U60 RVG

Top