G3S12003A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
$4.87
Available to order
Reference Price (USD)
1+
$4.87000
500+
$4.8213
1000+
$4.7726
1500+
$4.7239
2000+
$4.6752
2500+
$4.6265
Exquisite packaging
Discount
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Upgrade your electronic designs with Global Power Technology-GPT's G3S12003A Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Global Power Technology-GPT for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 260pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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