GPI65010DF56
GaNPower
GaNPower
GANFET N-CH 650V 10A DFN 5X6
$5.00
Available to order
Reference Price (USD)
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$5.00000
500+
$4.95
1000+
$4.9
1500+
$4.85
2000+
$4.8
2500+
$4.75
Exquisite packaging
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Boost your electronic applications with GPI65010DF56, a reliable Transistors - FETs, MOSFETs - Single by GaNPower. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, GPI65010DF56 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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