TK49N65W5,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$11.26
Available to order
Reference Price (USD)
1+
$11.26000
500+
$11.1474
1000+
$11.0348
1500+
$10.9222
2000+
$10.8096
2500+
$10.697
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TK49N65W5,S1F by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TK49N65W5,S1F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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