GTVA126001EC-V1-R0
Wolfspeed, Inc.
Wolfspeed, Inc.
600W GAN HEMT 50V 1.2-1.4GHZ FET
$782.45
Available to order
Reference Price (USD)
1+
$782.45000
500+
$774.6255
1000+
$766.801
1500+
$758.9765
2000+
$751.152
2500+
$743.3275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet Wolfspeed, Inc.'s GTVA126001EC-V1-R0, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 125 V
- Package / Case: SOT-957A
- Supplier Device Package: H-36248-2
Related Products
NXP USA Inc.
BLF8G10LS-270V,112
NXP USA Inc.
MRFX600HR5
Wolfspeed, Inc.
GTVA262711FA-V2-R0
Freescale Semiconductor
MRF8HP21130HR5
onsemi
CPH6316-TL-E
MACOM Technology Solutions
XF1001-SC-0G0T
NXP USA Inc.
MMRF1308HR5
Ampleon USA Inc.
BLM8D1822S-50PBY
Freescale Semiconductor
MRF8P23080HSR3
Infineon Technologies