2SC3583-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
2SC3583 - MD
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
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Boost your RF circuitry with 2SC3583-T1B-A, Renesas Electronics America Inc's premium BJT transistors tailored for high-speed switching. Key advantages include minimal intermodulation distortion and extended operational life. Widely adopted in 5G infrastructure and aerospace tech. Have questions? Send your inquiry we re here to optimize your procurement process!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT23-3 (TO-236)
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