HGT1S7N60C3DS
Harris Corporation
Harris Corporation
14A, 600V, UFS N-CHANNEL IGBT W/
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
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The HGT1S7N60C3DS Single IGBT by Harris Corporation sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Harris Corporation for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 165µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: -
- Test Condition: 480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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