HGTD1N120BNS9A
onsemi
onsemi
IGBT 1200V 5.3A 60W TO252AA
$1.68
Available to order
Reference Price (USD)
2,500+
$0.70122
5,000+
$0.66976
Exquisite packaging
Discount
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Choose HGTD1N120BNS9A Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes HGTD1N120BNS9A a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 5.3 A
- Current - Collector Pulsed (Icm): 6 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
- Power - Max: 60 W
- Switching Energy: 70µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 15ns/67ns
- Test Condition: 960V, 1A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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