HGTP5N120BND
onsemi
onsemi
IGBT 1200V 21A 167W TO220AB
$1.64
Available to order
Reference Price (USD)
800+
$1.73513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with HGTP5N120BND Single IGBTs from onsemi, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. onsemi's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
- Power - Max: 167 W
- Switching Energy: 450µJ (on), 390µJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
STMicroelectronics
STGB19NC60WT4
STMicroelectronics
STGW60H65DFB-4
Infineon Technologies
IKW75N65ET7XKSA1
Infineon Technologies
IRG4PH40UD2-EP
STMicroelectronics
STGWA40H120F2
Infineon Technologies
AIKB15N65DH5ATMA1
Infineon Technologies
IKW20N60H3FKSA1
onsemi
NGB8206NSL3
STMicroelectronics
STGD7NC60HT4
Renesas Electronics America Inc