HN1C01FE-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 50V 0.15A ES6
$0.05
Available to order
Reference Price (USD)
4,000+
$0.06510
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic systems with Toshiba Semiconductor and Storage's HN1C01FE-GR,LF BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Linear Integrated Systems, Inc.
IT122 DIE
Diodes Incorporated
DMMT5551S-7-F
Toshiba Semiconductor and Storage
HN1B04FU-GR,LXHF
Microchip Technology
JANTXV2N5796A
onsemi
NSVBT2222ADW1T1G
Infineon Technologies
BC817UPNE6327HTSA1
Linear Integrated Systems, Inc.
IT121 PDIP 8L
Diodes Incorporated
ZXTD717MCTA
Nexperia USA Inc.
PUMX2,115
Toshiba Semiconductor and Storage