HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ESV PLN
$0.39
Available to order
Reference Price (USD)
4,000+
$0.07140
8,000+
$0.06426
12,000+
$0.05712
28,000+
$0.05355
100,000+
$0.04760
Exquisite packaging
Discount
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Discover high-performance HN4B01JE(TE85L,F) Bipolar Junction Transistor Arrays from Toshiba Semiconductor and Storage, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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