HP8M31TB1
Rohm Semiconductor
Rohm Semiconductor
HP8M31TB1 IS LOW ON-RESISTANCE A
$2.53
Available to order
Reference Price (USD)
1+
$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
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The HP8M31TB1 from Rohm Semiconductor is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, HP8M31TB1 delivers consistent quality. Contact us now to learn more and secure your supply of Rohm Semiconductor s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
- Power - Max: 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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