HS8K1TB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+NCH POWER MOSFET
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
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The HS8K1TB by Rohm Semiconductor is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate HS8K1TB into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
- Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: HSML3030L10
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