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IXFN132N50P3

IXYS
IXFN132N50P3 Preview
IXYS
MOSFET N-CH 500V 112A SOT227B
$38.29
Available to order
Reference Price (USD)
1+
$25.92000
10+
$23.97600
100+
$20.47680
500+
$18.14400
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC

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