IAUA250N04S6N006AUMA1
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V) PG-HSOF-5
$4.42
Available to order
Reference Price (USD)
1+
$4.42000
500+
$4.3758
1000+
$4.3316
1500+
$4.2874
2000+
$4.2432
2500+
$4.199
Exquisite packaging
Discount
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Boost your electronic applications with IAUA250N04S6N006AUMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IAUA250N04S6N006AUMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 145µA
- Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-4
- Package / Case: 5-PowerSFN
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