IAUC41N06S5L100ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 41A TDSON-8-33
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
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IAUC41N06S5L100ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IAUC41N06S5L100ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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