IAUZ40N08S5N100ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 80A 8TSDSON
$0.67
Available to order
Reference Price (USD)
1+
$0.66980
500+
$0.663102
1000+
$0.656404
1500+
$0.649706
2000+
$0.643008
2500+
$0.63631
Exquisite packaging
Discount
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Optimize your electronic systems with IAUZ40N08S5N100ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IAUZ40N08S5N100ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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