IGB50N65H5ATMA1
Infineon Technologies
Infineon Technologies
IGBT PRODUCTS
$2.59
Available to order
Reference Price (USD)
1,000+
$1.91953
2,000+
$1.82812
Exquisite packaging
Discount
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The IGB50N65H5ATMA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IGB50N65H5ATMA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 1.59mJ (on), 750µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 23ns/173ns
- Test Condition: 400V, 50A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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