IKD15N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD15N60RC2ATMA1
$1.81
Available to order
Reference Price (USD)
1+
$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
Exquisite packaging
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Upgrade your power electronics with IKD15N60RC2ATMA1 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how IKD15N60RC2ATMA1 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 115.4 W
- Switching Energy: 570µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 18ns/374ns
- Test Condition: 400V, 15A, 49Ohm, 15V
- Reverse Recovery Time (trr): 129 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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