IGB50N65S5ATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 650V 80A TO263-3
$3.95
Available to order
Reference Price (USD)
1,000+
$2.16763
2,000+
$2.07622
Exquisite packaging
Discount
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Enhance your electronic designs with IGB50N65S5ATMA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 1.23mJ (on), 740µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 20ns/139ns
- Test Condition: 400V, 50A, 8.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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