IGOT60R070D1AUMA1
Infineon Technologies
Infineon Technologies
GANFET N-CH 600V 31A 20DSO
$15.66
Available to order
Reference Price (USD)
800+
$17.83468
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IGOT60R070D1AUMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IGOT60R070D1AUMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-20-87
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Related Products
Diodes Incorporated
DMP2036UVT-7
onsemi
NTLGF3501NT2G
Toshiba Semiconductor and Storage
TK20E60W5,S1VX
Nexperia USA Inc.
PSMN6R7-40MSDX
Vishay Siliconix
SIHW73N60E-GE3
Infineon Technologies
IPA60R060C7XKSA1
Fairchild Semiconductor
HUFA76423D3ST
Infineon Technologies
IPB010N06NATMA1
Infineon Technologies
IRFS3306TRLPBF
Rohm Semiconductor