IGP30N65F5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
$1.86
Available to order
Reference Price (USD)
500+
$1.70832
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IGP30N65F5XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 280µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 19ns/170ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
Related Products
IXYS
IXGT2N250
STMicroelectronics
STGW30V60DF
Renesas Electronics America Inc
RJH60T04DPQ-A1#T0
IXYS
IXYH85N120C4
Alpha & Omega Semiconductor Inc.
AOKS40B65H1
IXYS
IXGH16N170
Alpha & Omega Semiconductor Inc.
AOK40B65M3
Rohm Semiconductor
RGTH60TK65GC11
Fairchild Semiconductor
HGTP12N60A4
onsemi