IGP30N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 55A TO220-3
$1.86
Available to order
Reference Price (USD)
500+
$1.70832
Exquisite packaging
Discount
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Optimize power control with IGP30N65H5XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IGP30N65H5XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 280µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 19ns/177ns
- Test Condition: 400V, 15A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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