IHFW40N65R5SXKSA1
Infineon Technologies
Infineon Technologies
IHFW40N65R5SXKSA1
$5.34
Available to order
Reference Price (USD)
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$5.34000
500+
$5.2866
1000+
$5.2332
1500+
$5.1798
2000+
$5.1264
2500+
$5.073
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Maximize energy efficiency with IHFW40N65R5SXKSA1 Single IGBTs by Infineon Technologies, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose IHFW40N65R5SXKSA1 for your next project and experience the Infineon Technologies difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 61 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 108 W
- Switching Energy: 1.52mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 44ns/363ns
- Test Condition: 400V, 40A, 23.1Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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