IHW30N160R5XKSA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14
$5.13
Available to order
Reference Price (USD)
1+
$5.58000
10+
$5.04000
240+
$4.19396
720+
$3.62322
1,200+
$3.11150
Exquisite packaging
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Upgrade your power electronics with IHW30N160R5XKSA1 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how IHW30N160R5XKSA1 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 30A
- Power - Max: 263 W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 205 nC
- Td (on/off) @ 25°C: -/290ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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