IHW40N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A TO247-3
$4.15
Available to order
Reference Price (USD)
1+
$4.31000
10+
$3.87100
240+
$3.17200
720+
$2.70025
1,200+
$2.27733
Exquisite packaging
Discount
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The IHW40N65R5XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
- Power - Max: 230 W
- Switching Energy: 630µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 193 nC
- Td (on/off) @ 25°C: 30ns/258ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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