IHW50N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A TO247-3
$4.78
Available to order
Reference Price (USD)
1+
$5.30000
10+
$4.79100
240+
$3.98658
720+
$3.44403
1,200+
$2.95763
Exquisite packaging
Discount
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Optimize power control with IHW50N65R5XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IHW50N65R5XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 282 W
- Switching Energy: 740µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 230 nC
- Td (on/off) @ 25°C: 26ns/220ns
- Test Condition: 400V, 25A, 8Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Infineon Technologies