RGW50TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.43
Available to order
Reference Price (USD)
1+
$6.43000
500+
$6.3657
1000+
$6.3014
1500+
$6.2371
2000+
$6.1728
2500+
$6.1085
Exquisite packaging
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Upgrade your power electronics with RGW50TK65DGVC11 Single IGBTs by Rohm Semiconductor, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Rohm Semiconductor for top-quality components that meet global standards. Request a quote now to learn more about how RGW50TK65DGVC11 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
- Power - Max: 67 W
- Switching Energy: 390µJ (on), 430µJ (off)
- Input Type: Standard
- Gate Charge: 73 nC
- Td (on/off) @ 25°C: 35ns/102ns
- Test Condition: 400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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