IKA08N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 10.8A TO220-3
$2.42
Available to order
Reference Price (USD)
1+
$2.19000
10+
$1.97000
100+
$1.58370
500+
$1.30114
1,000+
$1.07808
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with IKA08N65H5XKSA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 10.8 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 31.2 W
- Switching Energy: 70µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 11ns/115ns
- Test Condition: 400V, 4A, 48Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-111
Related Products
Fairchild Semiconductor
SGR15N40LTF
IXYS
IXYB82N120C3H1
onsemi
ISL9V3036D3STV
onsemi
MGP7N60E
Infineon Technologies
IKW15N120H3FKSA1
STMicroelectronics
STGF15M65DF2
Microchip Technology
APT68GA60B2D40
IXYS
IXYH24N170CV1
Infineon Technologies
IGW40N65H5FKSA1
onsemi