NGTB25N120FL3WG
onsemi
onsemi
IGBT 1200V 100A TO247
$6.63
Available to order
Reference Price (USD)
1+
$6.12000
30+
$5.22533
120+
$4.55433
510+
$3.90557
1,020+
$3.32389
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with NGTB25N120FL3WG Single IGBTs from onsemi, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. onsemi's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 349 W
- Switching Energy: 1mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 136 nC
- Td (on/off) @ 25°C: 15ns/109ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 114 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Rohm Semiconductor
RGCL80TS60GC13
Microchip Technology
APT50GP60B2DQ2G
Rohm Semiconductor
RGCL60TK60DGC11
Infineon Technologies
IRG4IBC30WPBF-INF
Rohm Semiconductor
RGT8NL65DGTL
Rohm Semiconductor
RGT60TS65DGC13
NTE Electronics, Inc
NTE3323
Microchip Technology
APT45GP120B2DQ2G
onsemi
SGH20N60RUFDTU
IXYS