IKD04N60RFATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 600V 8A TO252-3
$0.68
Available to order
Reference Price (USD)
2,500+
$0.55551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKD04N60RFATMA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IKD04N60RFATMA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 75 W
- Switching Energy: 60µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 27 nC
- Td (on/off) @ 25°C: 12ns/116ns
- Test Condition: 400V, 4A, 43Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
IXYS
IXYH75N65C3H1
onsemi
HGTG10N120BND
Infineon Technologies
AIGB50N65H5ATMA1
Microchip Technology
APT75GN60LDQ3G
onsemi
NGD8205NT4
onsemi
NGD8205NT4G
Renesas Electronics America Inc
RJP3053DPP-A9#T2F
Renesas Electronics America Inc
RJP3065DPP-90#T2F
IXYS
IXGH36N60B3
STMicroelectronics