IKD10N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD10N60RC2ATMA1
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IKD10N60RC2ATMA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IKD10N60RC2ATMA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 18.8 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
- Power - Max: 79 W
- Switching Energy: 320µJ (on), 170µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 14ns/250ns
- Test Condition: 400V, 10A, 49Ohm, 15V
- Reverse Recovery Time (trr): 104 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
IXYS
IXXH30N65B4
Fairchild Semiconductor
FGPF70N30TTU
IXYS
IXYA20N120A4HV
STMicroelectronics
STGWT40V60DLF
Rohm Semiconductor
RGS80TSX2GC11
STMicroelectronics
STGB30H60DFB
Rohm Semiconductor
RGTH50TS65DGC13
Fairchild Semiconductor
FGB7N60UNDF
Infineon Technologies
IRG7PH46UDPBF
Harris Corporation