IKD15N60RBTMA1
Infineon Technologies
Infineon Technologies
IGBT, 30A, 600V, N-CHANNEL
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
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Optimize power control with IKD15N60RBTMA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IKD15N60RBTMA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 250 W
- Switching Energy: 900µJ
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 16ns/183ns
- Test Condition: 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr): 110 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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Infineon Technologies