IKW30N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW30N65ET7XKSA1
$4.16
Available to order
Reference Price (USD)
1+
$4.16000
500+
$4.1184
1000+
$4.0768
1500+
$4.0352
2000+
$3.9936
2500+
$3.952
Exquisite packaging
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The IKW30N65ET7XKSA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IKW30N65ET7XKSA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 590µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: 20ns/245ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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