IKW75N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 90A TO247-3
$7.37
Available to order
Reference Price (USD)
1+
$7.71000
10+
$7.02000
240+
$5.90542
720+
$5.21278
1,200+
$4.61048
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKW75N65EH5XKSA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures IKW75N65EH5XKSA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.3mJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 28ns/174ns
- Test Condition: 400V, 75A, 8Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
onsemi
SGH40N60UFDTU
onsemi
FGH40N60SMDF
onsemi
AFGY160T65SPD-B4
Renesas Electronics America Inc
RJP30E2DPP-M0#T2
Microchip Technology
APT50GT60BRDQ2G
Microchip Technology
APT25GR120SD15
Microchip Technology
APT35GA90B
Infineon Technologies
IKZA40N65RH5XKSA1
onsemi
FGD3325G2-F085
Rohm Semiconductor