IMB9AT110
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS DUAL PNP SMT6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.11055
6,000+
$0.10385
15,000+
$0.09715
30,000+
$0.09380
Exquisite packaging
Discount
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Introducing Rohm Semiconductor's IMB9AT110 advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Rohm Semiconductor stands behind every IMB9AT110 unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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