PEMD12,315
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.07
Available to order
Reference Price (USD)
1+
$0.07441
500+
$0.0736659
1000+
$0.0729218
1500+
$0.0721777
2000+
$0.0714336
2500+
$0.0706895
Exquisite packaging
Discount
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Introducing Nexperia USA Inc.'s PEMD12,315 advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Nexperia USA Inc. stands behind every PEMD12,315 unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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