IMBF170R450M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 9.8A TO263-7
$9.95
Available to order
Reference Price (USD)
1+
$9.95000
500+
$9.8505
1000+
$9.751
1500+
$9.6515
2000+
$9.552
2500+
$9.4525
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IMBF170R450M1XTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IMBF170R450M1XTMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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Infineon Technologies