IMD16AT108
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.3W SMT6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.12375
6,000+
$0.11625
15,000+
$0.10875
30,000+
$0.10500
Exquisite packaging
Discount
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Discover high-quality IMD16AT108 Bipolar Junction Transistor (BJT) Arrays from Rohm Semiconductor, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Rohm Semiconductor's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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