IMH23T110
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS DUAL NPN SMT6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.11996
6,000+
$0.11269
15,000+
$0.10542
30,000+
$0.10178
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rohm Semiconductor's IMH23T110 represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, Rohm Semiconductor guarantees quality and performance. Get competitive quotes and lead times inquire about IMH23T110 now!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
Related Products
Toshiba Semiconductor and Storage
RN2964(TE85L,F)
Diodes Incorporated
DCX143TU-7-F
Rohm Semiconductor
UMH8NTR
onsemi
NSB13211DW6T1G
Nexperia USA Inc.
PBLS4004D,115
Rohm Semiconductor
UMA4NTR
Toshiba Semiconductor and Storage
RN4989,LXHF(CT
onsemi
NSBC143TDXV6T5G
onsemi
MUN5233DW1T1G
onsemi